Aerospace, Defence, Industrial, Transportation, Telecommunications & Communications,

Singapore, 2020

Discrete Unmatched GaN Transistors

GaN-on-SiC HEMTs with no internal matching. These are packaged versions of our high performance discrete HEMT die with high reliability and excellent heat dissipation.

Discrete Pre-matched GaN Transistors

Pre-matched GaN-on-SiC HEMTs with input internal matching for easy module and system designs.

Discrete Asymmetrical Doherty Device

High efficiency at average power to minimize power consumption and keep the overall solution size (thermal constraint) to a minimum cost for Macro and MIMO Telecom applications.

GaN Bare Dies

Gallium GaN on SiC HEMTs bare dies are designed with optimum thermal behaviour and ideal for making hybrids and modules.

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